Datasheet PSMN2R8-40PS - NXP Даташит Полевой транзистор, N CH, 40 В, TO-220 — Даташит
Наименование модели: PSMN2R8-40PS
Купить PSMN2R8-40PS на РадиоЛоцман.Цены — от 80 до 344 ₽ 27 предложений от 13 поставщиков Транзистор: N-MOSFET; полевой; 40В; 100А; Idm: 797А; 211Вт | |||
PSMN2R8-40PS.127 Nexperia | 80 ₽ | ||
PSMN2R8-40PS,127 NXP | 157 ₽ | ||
PSMN2R8-40PS,127 Nexperia | от 274 ₽ | ||
PSMN2R8-40PS,127 NXP | по запросу |
Подробное описание
Производитель: NXP
Описание: Полевой транзистор, N CH, 40 В, TO-220
Краткое содержание документа:
NXP power switching MOSFETs in compact QFN3333 package
Smaller.
Faster. Cooler.
30 V Trench 6 MOSFETs in 3.3 x 3.3 mm QFN package
A new range of 30 V Trench 6 MOSFETs in QFN3333 (SOT873) package NXP now offers a range of high-performance, 30 V, logic-level MOSFETs in QFN3333 package. Measuring only 3.3 mm x 3.3 mm x 1 mm, the devices share the same great switching performance as our Trench-6 LFPAK types but with a 60% smaller footprint. They are ideal for space-constrained designs and high-efficiency power switching applications.
Key benefits } High efficiencies in power switching applications due to the optimized RDSon and gate charge (Qg) characteristics of Trench-6 technology } Fast switching - optimized for higher switching frequencies, typically up to 500 KHz } 1 mm package height for low-profile applications } Solder die-attach provides superior thermal performance - Rth(j-mb) } Reduced switching spikes } Avalanche rated and 100% factory tested to ensure high reliability in you
Спецификации:
- Полярность транзистора: N Channel
- Drain Source Voltage Vds: 40 В
- On State Resistance: 2.8 МОм
- Rds(on) Test Voltage Vgs: 10 В
- Корпус транзистора: TO-220
- Количество выводов: 3
RoHS: есть
Дополнительные аксессуары:
- CIRCUITWORKS - CW8100
- STANNOL - 535766
Варианты написания:
PSMN2R840PS, PSMN2R8 40PS