Datasheet Vishay SiR846DP-T1-GE3 — Даташит

New Product SiR846DP
Vishay Siliconix N-Channel 100-V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
RDS(on) (О©) ID (A)a 0.0078 at VGS = 10 V 60 0.0085 at VGS = 7.5 V 60 VDS (V)
100 Qg (Typ.)
35.7 nC PowerPAKВ® SO-8 Halogen-free According to IEC 61249-2-21
Definition TrenchFETВ® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS
S 6.15 mm Primary Side Switch Isolated DC/DC Converters Full Bridge 5.15 mm 1 S
2 S
3 D G
4 D
8 D
7 G D
6 D
5 Bottom View S
N-Channel MOSFET Ordering Information: SiR846DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 В°C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (TJ = 150 В°C) Symbol
VDS
VGS
TC = 25 В°C
TC = 70 В°C …