Datasheet Vishay Si4421DY-T1-GE3 — Даташит

Si4421DY
Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
VDS (V) -20 RDS(on) (О©) ID (A) 0.00875 at VGS = -4.5 V -14 0.01075 at VGS = -2.5 V -12 0.0135 at VGS = -1.8 V -11 Halogen-free Option Available TrenchFETВ® Power MOSFET RoHS
APPLICATIONS COMPLIANT Game Station
-Load Switch SO-8
S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G Top View
D Ordering Information: Si4421DY-T1-E3 (Lead (Pb)-free)
Si4421DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 В°C, unless otherwise noted
Parameter Symbol 10 s Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS В±8 Continuous Drain Current (TJ = 150 В°C)a TA = 25 В°C
TA = 70 В°C Pulsed Drain Current IS
TA = 25 В°C
TA = 70 В°C PD -10
-8
-40 -2.7 A -1.36 3.0 1.5 1.9 0.95 TJ, Tstg Operating Junction and Storage Temperature Range V -14
-11.5 IDM Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa ID Unit -55 to 150 W
В°C THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Symbol
t ≤ 10 s
Steady State
Steady State RthJA …