Datasheet Vishay Si4435BDY-T1-GE3 — Даташит

Si4435BDY
Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY
VDS (V)
-30 RDS(on) (Ω) ID (A) 0.020 at VGS = -10 V -9.1 0.035 at VGS = -4.5 V -6.9 • Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Advanced High Cell Density Process
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Load Switches
• Battery Switch
SO-8
S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G Top View
D Ordering Information: Si4435BDY-T1-E3 (Lead (Pb)-free)
Si4435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C
TA = 70 °C Continuous Diode Current (Diode Conduction)a IS
TA = 25 °C
TA = 70 °C PD -7 -7.3 -5.6
-50 -2.1 -1.25 2.5 1.5 1.6 0.9 TJ, Tstg Operating Junction and Storage Temperature Range V -9.1 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit -55 to 150 A W
°C THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain) Symbol …