Datasheet 1N5820, 1N5821, 1N5822 (ON Semiconductor)

link to page 3 link to page 3 1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and
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polarity protection diodes.
Features SCHOTTKY BARRIER
•Extremely Low VF
RECTIFIERS
•Low Power Loss/High Efficiency
3.0 AMPERES
•Low Stored Charge, Majority Carrier Conduction
20, 30, 40 VOLTS
•Shipped in plastic bags, 500 per bag •Available in Tape and Reel, 1500 per reel, by adding a “RL'' suffix to the part number •Pb-Free Packages are Available*
Mechanical Characteristics:
•Case: Epoxy, Molded •Weight: 1.1 Gram (Approximately) •Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable •Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
AXIAL LEAD
•Polarity: Cathode indicated by Polarity Band
CASE 267-05 (DO-201AD) STYLE 1 MARKING DIAGRAM
A 1N 582x YYWWG G A = Assembly Location 1N582x = Device Code x = 0, 1, or 2 YY = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of this data sheet.
Preferred
devices are recommended choices for future use *For additional information on our Pb-Free strategy and soldering details, please and best overall value. download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007
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Publication Order Number:
December, 2007 - Rev. 10 1N5820/D