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Datasheet International Rectifier IRF530NS

Производитель:International Rectifier
Серия:IRF530NS, IRF530NL
Модель:IRF530NS

Leaded 100 V Single N-Channel HEXFET Power MOSFET in a D2-Pak package. PB-IRF530NS. Obsolete

Datasheets

  • Скачать » Datasheet, PDF, 628 Кб
    Выписка из документа ↓
    PD - 91352B HEXFET Power MOSFET
    l l l l l l IRF530NS IRF530NL ®
    VDSS = 100V RDS(on) = 90m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D G S ID = 17A Description
    Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
    The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications. D2Pak IRF530NS TO-262 IRF530NL Absolute Maximum Ratings
    Parameter
    ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
    17 12 60 3.8 70 0.47 ± 20 9.0 7.0 7.4 -55 to + 175 300 (1.6mm from case ) Units
    A W W W/°C V A mJ V/ns °C Thermal Resistance
    Parameter
    RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state)** Typ.
    ­­­ ­­­ Max.
    2.15 40 Units
    °C/W www.irf.com 1
    09/04/02 IRF530NS/IRF530NL
    Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
    V(BR)DSS
    V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche E ...

Цены

    IRF530NS на РадиоЛоцман.Цены — от 19,40 до 130 руб.
    MOSFET, N D2-PAK, Transistor Type:MOSFET, Transistor Polarity:N, Current, Id Cont:17A, Resistance, Rds On:0.11ohm, Case Style:TO-263, Termination Type:SMD, Current, Idm Pulse:60A, Marking,...
    Цена IRF530NS
    ПоставщикПроизводительНаименованиеЦена
    ЭлитанInfineonIRF-530NS19 руб.
    ICdaromInfineonIRF530NSот 31 руб.
    КремнийInternational RectifierIRF530NSпо запросу
    ЭлектроПласт - ЕкатеринбургIRF530NS-IRпо запросу
    ЭлектроПластIRF530NS/IRпо запросу
    Все 14 предложений от 10 поставщиков »

Классификация производителя

Obsolete Leaded (Pb) N-Channel MOSFETs

Выписка из документа:
PD - 91352B HEXFET Power MOSFET
l l l l l l IRF530NS IRF530NL ®
VDSS = 100V RDS(on) = 90m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D G S ID = 17A Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switc...

На английском языке: Datasheet International Rectifier IRF530NS

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