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Производитель:International Rectifier
Серия:IRF530N
Модель:IRF530N

PB-IRF530N. Leaded 100 V Single N-Channel HEXFET Power MOSFET in a TO-220AB package. Obsolete

Datasheets

  • Скачать » Datasheet, PDF, 222 Кб
    Выписка из документа ↓
    PD - 91351 IRF530N
    HEXFET® Power MOSFET
    l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 90m G S ID = 17A Description
    Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings
    Parameter
    ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max.
    17 12 60 70 0.47 ± 20 9.0 7.0 7.4 -55 to + 175 300 (1.6mm from case ) 10 lbf in (1.1N m) Units
    A W W/°C V A mJ V/ns °C Thermal Resistance
    Parameter
    RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
    ­­­ 0.50 ­­­ Max.
    2.15 ­­­ 62 Units
    °C/W www.irf.com 1
    3/16/01 IRF530N
    Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
    V(BR)DSS
    V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 100 ­­­ ­­­ 2.0 12 ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ Typ. ­­­ 0.11 ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ 9.2 22 35 25 4.5 7.5 ­­­ 920 ­­­ 130 ­­­ 19 ­­­ 340 Max. Units Conditi ...

Цены

    IRF530N на РадиоЛоцман.Цены — от 7,72 до 47,00 руб.
    N-Channel TrenchMOS transistor VDSS=100V_Id=17 A_RDS(ON) = 110mOm
    Цена IRF530N
    ПоставщикПроизводительНаименованиеЦена
    AliExpressPBF IRF530N IRF530 N 100 В 17A К-2207,72 руб.
    ЭлитанInfineonIRF530N15,90 руб.
    PL-1IRF530Nот 17,60 руб.
    ICdaromInfineonIRF530Nот 20,05 руб.
    ТаймЧипсIRF530N006(HSMRKD)по запросу
    Все 22 предложений от 16 поставщиков »

Классификация производителя

Obsolete Leaded (Pb) N-Channel MOSFETs

Выписка из документа:
PD - 91351 IRF530N
HEXFET® Power MOSFET
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 90m G S ID = 17A Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-2...

  • Серия: IRF530N (1)
    • IRF530N

На английском языке: Datasheet International Rectifier IRF530N

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