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STMicroelectronics IRF530

Производитель:STMicroelectronics
Серия:IRF530
Модель:IRF530

N-channel 100 V, 0.115 Ohm, 14 A, TO-220, Low Gate Charge STripFETTM II Power MOSFET

Документы:

На английском языке: Datasheet STMicroelectronics IRF530

    IRF530 на РадиоЛоцман.Цены — от 18,20 до 47,00 руб.
    MOSFET, N, 100V, 17A, TO-220, Transistor Type:MOSFET, Transistor Polarity:N, Voltage, Vds Typ:100V, Current, Id Cont:15A, Resistance, Rds On:0.11ohm, Voltage, Vgs Rds...
    Цены на IRF530
    ПоставщикПроизводительНаименованиеЦена
    ЭлитанVishayIRF53018,20 руб.
    PL-1IRF530Nот 19,00 руб.
    ДКО ЭлектронщикInfineonIRF530NPBFот 21,00 руб.
    КимInternational RectifierIRF530N orig47,00 руб.
    Океан ЭлектроникиVishayIRF530STRLPBFпо запросу
    Все 28 предложений от 18 поставщиков »

Классификация производителя:

MOSFETs

Выписка из документа:
N-CHANNEL 100V -0.115 -14A TO-220 LOW GATE CHARGE STripFETTM II POWER MOSFET
TYPE IRF530 IRF530 VDSS 100 V RDS(on) <0.16 ID 14 A TYPICAL RDS(on) = 0.115 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE
TO-220 3 1 2 DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFETTM process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s SOLENOID AND RELAY DRIVERS s REGULATOR s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, etc.) ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR bs O
ID ID dv/dt EAS Tj VGS let o
(1) (2) Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate-source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Pr e du o (s) ct so Ob -te le ro P uc d s) t( Parameter Value 100 100 ± 20 14 10 56 60 0.4 20 70 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °...

  • Серия: IRF530 (1)
    • IRF530

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