Datasheet STMicroelectronics IRF530 — Даташит

N-CHANNEL 100V -0.115 -14A TO-220 LOW GATE CHARGE STripFETTM II POWER MOSFET
TYPE IRF530 IRF530 VDSS 100 V RDS(on) <0.16 ID 14 A TYPICAL RDS(on) = 0.115 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE
TO-220 3 1 2 DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFETTM process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s SOLENOID AND RELAY DRIVERS s REGULATOR s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, etc.) ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR bs O
ID ID dv/dt EAS Tj VGS let o
(1) (2) Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate-source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Pr e du o (s) ct so Ob -te le ro P uc d s) t( Parameter Value 100 100 ± 20 14 10 56 60 0.4 20 70 -55 to 175 Unit V V V A A A W W/°C V/ns mJ °C IDM( ) Ptot Tstg ( ) Pulse width limited by safe operating area. August 2002 (1) ISD 14A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX (2) Starting T j = 25 oC, ID = 14A, VDD = 50V 1/8 NEW DATASHEET ACCORDING TO PCN DSG/CT/1C02 MARKING: IRF530 @. IRF530
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.5 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 100°C VGS = ± 20 V Min. 100 1 10 ±100 Typ. Max. Unit V µA µA nA ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 7 A Min. 2 Typ. 3 DYNAMIC
Symbol gfs
(*) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditi …