Datasheet ON Semiconductor IRF530 — Даташит

IRF530
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TMOS E−FET.^TM
Power Field Effect
Transistor N−Channel Enhancement−Mode Silicon
Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, and PWM motor controls.
These devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating area are critical and offer
additional safety margin against unexpected voltage transients.
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature http://onsemi.com TMOS POWER FET
14 AMPERES, 100 VOLTS
RDS(on) = 0.140 W CASE 221A−09
TO-220AB D ® G
S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) …