Datasheet ON Semiconductor BC560C — Даташит

BC560C
Low Noise Transistors
PNP Silicon
Features These are Pb-Free Devices* http://onsemi.com
COLLECTOR
1 MAXIMUM RATINGS
Rating Symbol Value Unit Collector -Emitter Voltage VCEO -45 Vdc Collector -Base Voltage VCBO -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current -Continuous IC -100 mAdc Total Power Dissipation @ TA = 25В°C
Derate above TA = 25В°C PD 625
5.0 mW
mW/В°C Total Power Dissipation @ TA = 25В°C
Derate above TA = 25В°C PD 1.5
12 W
mW/В°C TJ, Tstg -55 to +150 В°C Operating and Storage Junction
Temperature Range 2
BASE
3
EMITTER TO-92
CASE 29
STYLE 17
1 12 THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 В°C/W Thermal Resistance, Junction-to-Case RqJC 83.3 В°C/W 3
STRAIGHT LEAD
BULK PACK Stresses exceeding Maximum Ratings may damage the device. Maximum …