AONE36132
25V Dual Asymmetric N-Channel MOSFET General Description Product Summary Bottom Source Technology Very Low RDS(ON) High Current Capability RoHS and Halogen-Free Compliant VDS Q1
25V Q2
25V ID (at VGS=10V) 17A 34A RDS(ON) (at VGS=10V) < 4.6mО© < 1.4mО© RDS(ON) (at VGS=4.5V) < 6mО© Applications < 1.7mО© 100% UIS Tested
100% Rg Tested DC/DC Converters in PC, Servers Point of load Converters DFN3.3x3.3A
Top View Bottom View Transparent View Top View Pin 1 Orderable Part Number Package Type Form Minimum Order Quantity AONE36132 DFN3.3x3.3A Tape & Reel 3000 Absolute Maximum Ratings TA=25В°C unless otherwise noted
Parameter
Drain-Source Voltage Symbol
VDS Gate-Source Voltage Continuous Drain
Current Units
V В±12 В±12 V 60G 60G 38 60G 160 200 17 34 13.5 27 IAS 48 60 A EAS 12 18 mJ 25 35.5 10 14 2 2.5 1.3 1.6 ID TC=100В°C
C IDM
TA=25В°C IDSM TA=70В°C Avalanche Current C
Avalanche energy L=0.01mH
TC=25В°C Power Dissipation B TC=100В°C C PD TA=25В°C
Power Dissipation A Max Q2
25 VGS
TC=25В°C Continuous Drain
Current
Pulsed Drain Current Max Q1
25 PDSM TA=70В°C Junction and Storage Temperature Range
Thermal Characteristics
Parameter …
