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Datasheet International Rectifier IRF7341

HEXFET Power MOSFET

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  PD -95199 IRF7341PbF
  Generation V Technology
  l Ultra Low On-Resistance
  l Dual N-Channel Mosfet
  l Surface Mount
  l Available in Tape & Reel
  l Dynamic dv/dt Rating
  l Fast Switching
  l Lead-Free
  Description HEXFET® Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS = 55V
  RDS(on) = 0.050Ω Top View Fifth Generation HEXFETs from International Rectifier
  utilize advanced processing techniques to achieve
  extremely low on-resistance per silicon area. This
  benefit, combined with the fast switching speed and
  ruggedized device design that HEXFET Power
  MOSFETs are well known for, provides the designer
  with an extremely efficient and reliable device for use
  in a wide variety of applications.
  The SO-8 has been modified through a customized
  leadframe for enhanced thermal characteristics and
  multiple-die capability making it ideal in a variety of
  power applications. With these improvements, multiple
  devices can be used in an application with dramatically ...

Цены

Модельный ряд

• IRF7341PBF IRF7341TRPBF

Классификация производителя

• Power > MOSFET > 12V-300V N-Channel Power MOSFET > 40V-75V N-Channel Power MOSFET

На английском языке: Datasheet International Rectifier IRF7341

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