Datasheet Infineon SMBT3906E6327HTSA1 — Даташит

SMBT3906.MMBT3906
PNP Silicon Switching Transistors
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• For SMBT3906S and SMBT3906U:
Two (galvanic) internal isolated transistor
with good matching in one package
• Complementary types:
SMBT3904.MMBT3904 (NPN)
• SMBT3906S/ U: for orientation in reel
see package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101 Type Marking Pin Configuration SMBT3906/ MMBT3906 s2A 1=B SMBT3906S s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 SMBT3906U s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 2=E 3=C -Package
-SOT23 Maximum Ratings
Parameter Symbol Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 40 Emitter-base voltage VEBO 6 Collector current IC Total power dissipation-Ptot Value 200
330 TS ≤ 115°C, SOT363, MMBT3906S 250 TS ≤ 107°C, SC74, MMBT3906U 330
Tj Storage temperature Tstg 1 V mA
mW TS ≤ 71°C, SOT23, MMBT3906 Junction temperature Unit 150 °C -65 . 150 2012-08-21 SMBT3906.MMBT3906
Thermal Resistance
Parameter
Junction -soldering point1) Symbol
RthJS Value SMBT3906/ MMBT3906 ≤ 240 SMBT3906S ≤ 140 SMBT3906U ≤ 130 Unit
mW 1For calculation of R …