N-Channel RF Amplifiers
BF256A/BF256B/BF256C BF256A/BF256B/BF256C
N-Channel RF Amplifiers
• This device is designed for VHF/UHF amplifiers.
• Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VDG Drain-Gate Voltage Parameter Value
30 Units
V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA PD Total Device Dissipation @TA=25°C
Derate above 25°C 350
2.8 mW
mW/°C TSTG Operating and storage Temperature Range -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units -0.5 -7.5 V -0.5 -8 V -5 nA 7
13
18 mA Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage VDS = 0, IG = 1µA -30 VGS VDS = 15V, ID = 200µA Gate-Source VGS(off) Gate-Source Cutoff Voltage VDS = 15V, ID = 10nA IGSS Gate Reverse Current VGS = -20V, VGS = 0 On Characteristics
IDSS
Zero-Gate Voltage Drain Current
BF256A
BF256B
BF256C VGS = 15V, VGS = 0 3
6
11 VDS = 15V, VGS = 0, f = 1KHz 4.5 V Small Signal Characteristics
gfs Common Source Forward Transconductance ©2003 Fairchild Semiconductor Corporation mmhos Rev. A, June 2003 BF256A/BF256B/BF256C Package Dimensions TO-92
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