P-Channel 2.5V Specified PowerTrench MOSFET
FDS6575
P-Channel 2.5V Specified PowerTrench MOSFET
General Description Features This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 8V). • –10 A, –20 V. RDS(ON) = 13 mΩ @ V GS = –4.5 V
RDS(ON) = 17 mΩ @ V GS = –2.5 V Applications • High performance trench technology for extremely
low RDS(ON) • Low gate charge • Power management • High current and power handling capability • Load switch
• Battery protection DD DD DD
DD SO-8
Pin 1 SO-8 G
G
S
S
SS
SS Absolute Maximum Ratings
Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter –20 V V GSS Gate-Source Voltage ±8 V ID Drain Current –10 A PD Power Dissipation for Single Operation – Continuous (Note 1a) – Pulsed –50
(Note 1a) 2.5 (Note 1b) 1.5 (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range W 1.2
–55 to +175 °C Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W RθJ C Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity FDS6575 FDS6575 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDS6575 Rev F(W) FDS6575 September 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics
BV DSS …
