Power LDMOS transistor
BLP05H9S500P
Power LDMOS transistor
Rev. 1 — 10 September 2019 Product data sheet 1. Product profile
1.1 General description
500 W LDMOS power transistor for various applications such as ISM, RF plasma lighting
and defrosting at frequencies from 423 MHz to 443 MHz.
Table 1.
Typical performance
RF performance at VDS = 50 V; IDq = 50 mA in a class-AB application circuit.
Test signal
CW
CW pulsed
[1] [1] f VDS PL Gp D (MHz) (V) (W) (dB) (%) 433 50 500 25.3 75 433 50 500 25.6 75.8 tp = 100 s; = 10 %. 1.2 Features and benefits High efficiency
Easy power control
Excellent ruggedness
Integrated ESD protection
Designed for ISM operation (423 MHz to 443 MHz)
Excellent thermal stability
For RoHS compliance see the product details on the Ampleon website 1.3 Applications RF power amplifiers for CW and pulsed CW applications in the 423 MHz to 443 MHz
frequency range such as ISM, RF plasma lighting and defrosting BLP05H9S500P
Power LDMOS transistor 2. Pinning information
Table 2. Pinning Pin Description 1 gate 2 2 gate 1 3 drain 1 4 drain 2 Simplified outline
4 Graphic symbol …
