Datasheet Fairchild FDV303N — Даташит

August 1997 FDV303N
Digital FET, N-Channel
General Description Features These N-Channel enhancement mode field effect transistors are
produced using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on-state resistance at low gate drive conditions. This device is
designed especially for application in battery circuits using either
one lithium or three cadmium or NMH cells. It can be used as an
inverter or for high-efficiency miniature discrete DC/DC
conversion in compact portable electronic devices like cellular
phones and pagers. This device has excellent on-state
resistance even at gate drive voltages as low as 2.5 volts. 25 V, 0.68 A continuous, 2 A Peak.
RDS(ON) = 0.45 Ω @ VGS = 4.5 V
RDS(ON) = 0.6 Ω @ VGS= 2.7 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. VGS(th) < 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
Alternative to TN0200T and TN0201T. SOT-23 SuperSOTTM-8 SuperSOTTM-6 SO-8 SOIC-16 SOT-223 Mark:303 D S G Absolute Maximum Ratings
Symbol Parameter VDSS
VGSS …