FDC604P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description Features This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications. • –5.5 A, –20 V. Applications • Fast switching speed. • Battery management • High performance trench technology for extremely
low RDS(ON) • Load switch RDS(ON) = 0.033 Ω @ VGS = –4.5 V
RDS(ON) = 0.043 Ω @ VGS = –2.5 V
RDS(ON) = 0.060 Ω @ VGS = –1.8 V • Battery protection D D S SuperSOT TM-6 D D 6 2 5 3 4 G Absolute Maximum Ratings
Symbol 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current -5.5 A PD Maximum Power Dissipation – Continuous (Note 1a) – Pulsed TJ, TSTG -20
(Note 1a) 1.6 (Note 1b) 0.8 Operating and Storage Junction Temperature Range W -55 to +150 °C (Note 1a) 78 °C/W (Note 1) 30 °C/W Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity .604 FDC604P 7’’ 8mm 3000 units 2000 Fairchild Semiconductor Corporation FDC604P Rev B (W) FDC604P June 2000
PRELIMINARY Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –12 mV/°C Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS
===∆TJ
IDSS Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C
VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA On Characteristics –20 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th)
===∆TJ
RDS(on) Gate Threshold Voltage
Temperature Coefficient …
