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Datasheet International Rectifier IRF5305STRR

International Rectifier IRF5305STRR

Производитель:International Rectifier
Серия:IRF5305S/L
Модель:IRF5305STRR

PB-IRF5305S. Leaded -55 V Single P-Channel HEXFET Power MOSFET in a D2-Pak package. Obsolete

Документы:

На английском языке: Datasheet International Rectifier IRF5305STRR

    MOSFET P-CH 55V 31A D2PAK
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Классификация производителя:

Obsolete Leaded (Pb) P-Channel MOSFETs

Выписка из документа:
PD - 91386C IRF5305S/L
HEXFET® Power MOSFET
Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l D VDSS = -55V RDS(on) = 0.06 G ID = -31A
S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor...

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