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Datasheet International Rectifier IRF5305L

Производитель:International Rectifier

PB-IRF5305L. Leaded -55 V Single P-Channel HEXFET Power MOSFET in a TO-262 package. Obsolete


    МОП-транзистор N-Chan 100V 9.2 Amp
    ЭлитанInternational RectifierIRF5305L96,40 руб.
    КремнийIRF5305Lпо запросу
    ЭлектроПласт - ЕкатеринбургInternational RectifierIRF5305Lпо запросу
    ТаймЧипсIRF5305+Lпо запросу
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Классификация производителя:

Obsolete Leaded (Pb) P-Channel MOSFETs

Выписка из документа:
PD - 91386C IRF5305S/L
Advanced Process Technology Surface Mount (IRF5305S) l Low-profile through-hole (IRF5305L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l D VDSS = -55V RDS(on) = 0.06 G ID = -31A
S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Aval...

На английском языке: Datasheet International Rectifier IRF5305L

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