.. according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.399 17 V nC PG-TO252 Спецификации: Continuous Drain Current Id: 9 А Current Id Max: 9 А Drain Source Voltage Vds: 550 В On ...
Наименование модели: IPD50R520CP Производитель: Infineon Описание: Полевой транзистор, N, TO-252 Скачать Data Sheet Краткое содержание документа: Type IPD50R520CP CoolMOSTM Power Transistor Package · Lowest figure of merit RON x Qg · Ultra low gate ...
.. Скачать Data Sheet Краткое содержание документа: IPD60R385CP CoolMOS® Power Transistor Features · Worldwide best R ds,on in TO252 · Ultra low gate charge · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) ...
Наименование модели: IPD60R520CP Производитель: Infineon Описание: Полевой транзистор, N, TO-252 Скачать Data Sheet Краткое содержание документа: IPD60R520CP CoolMOSTM Power Transistor Features · Lowest figure-of-merit R ON x Qg · Ultra low gate ...
.. · Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max @ Tj =25°C Q g,typ 650 0.6 21 V nC PG-TO252 Спецификации: Continuous Drain Current Id: 6.1 А Current Id Max: 6.1 А Drain Source Voltage Vds: 650 В On ...
.. RoHS compliant · Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 1.2 28 V nC PG-TO252 Спецификации: Continuous Drain Current Id: 5.1 А Current Id Max: 5.1 А Drain Source Voltage Vds: 900 В On ...