Altinkaya: турецкие корпуса для РЭА

Datasheets - Полевые транзисторы Microchip - 3

Подраздел: "Полевые транзисторы"
Производитель: "Microchip"
Найдено: 51 Вывод: 41-51

Вид: Список / Картинки

  1. The MCP87000 family of high-speed MOSFETs have been designed to optimize the trade-off between ultra-low On-state resistance (Rds-on) and Gate Charge (Qg) to maximize power conversion efficiency in switched mode power supplies
  2. The MCP87000 family of high-speed MOSFETs have been designed to optimize the trade-off between ultra-low On-state resistance (Rds-on) and Gate Charge (Qg) to maximize power conversion efficiency in switched mode power supplies
Выбираем схему BMS для заряда литий-железофосфатных (LiFePO4) аккумуляторов
  1. The MCP87030 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package
  2. The MCP87000 family of high-speed MOSFETs have been designed to optimize the trade-off between ultra-low On-state resistance (Rds-on) and Gate Charge (Qg) to maximize power conversion efficiency in switched mode power supplies
  1. The MCP87000 family of high-speed MOSFETs have been designed to optimize the trade-off between ultra-low On-state resistance (Rds-on) and Gate Charge (Qg) to maximize power conversion efficiency in switched mode power supplies
  2. The TC4423A/4424A/4425A are a family of dual, 3A-output MOSFET Drivers, which are high-current buffer/drivers capable of driving large MOSFET transistors and Insulated Gate Bipolar Transistors (IGBT)
  3. The TC4423A/4424A/4425A are a family of dual, 3A-output MOSFET Drivers, which are high-current buffer/drivers capable of driving large MOSFET transistors and Insulated Gate Bipolar Transistors (IGBT)
  4. The TC4423A/4424A/4425A are a family of dual, 3A-output MOSFET Drivers, which are high-current buffer/drivers capable of driving large MOSFET transistors and Insulated Gate Bipolar Transistors (IGBT)
  5. HT0440 is a dual, high voltage, isolated MOSFET driver utilizing proprietary HVCMOSВ® technology
  6. 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process
  7. 2N7002 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process

Сортировать по: релевантность / дата

Электронные компоненты. Бесплатная доставка по России