Datasheets - Полевые транзисторы Nexperia

Подраздел: "Полевые транзисторы"
Производитель: "Nexperia"
Найдено: 11 Вывод: 1-11

Вид: Список / Картинки

  1. 30 В, N-канальный траншейный МОП-транзистор
  2. Datasheet Nexperia PHK12NQ03LT,518
    N-channel TrenchMOS logic level FET
  3. Datasheet Nexperia BSP122,115
    N-channel vertical D-MOS logic level FET
  4. Datasheet Nexperia GAN063-650WSAQ
    650 V, 50 mΩ Gallium Nitride (GaN) FET The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering ...
  1. Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
  2. Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.
  3. Standard level gate drive N-channel enhancement mode MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's NextPower Live portfolio, the PSMN3R7-100BSE delivers very low R DSon and a very strong linear-mode (SOA) performance.
  4. SOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logic level gate drive N-channel enhancement mode MOSFET in 150В °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed ...
  5. SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia's unique 'њSchottkyPlus'ќ technology delivers ...
  6. N-channel TrenchMOS logic level FET
  7. N-канальный MOSFET логический уровень 25 В 0,99 мОм в LFPAK с использованием технологии NextPower

Сортировать по: релевантность / дата