Новости - Память - 3

VLSI Solution announces availability of VS23S040, a versatile SPI SRAM device with the largest capacity on the market. VLSI Solution's VS23S040 is an easy to use four megabit static RAM device. The memory can be accessed via a standard SPI ...

Setting a new threshold for mobile storage to handle ever-increasing amounts of multimedia content Samsung Electronics announced that it has begun mass production of the industry’s first 512-gigabyte (GB) embedded Universal Flash Storage ...

High-speed 40 MHz operation and wide voltage range from 1.8 to 3.6 V improve reliability in IoT equipment LAPIS Semiconductor has recently announced the development of 1 Mbit ferroelectric random access memory (FeRAM) designed for applications such ...

Everspin Technologies has begun sampling its new 1-Gigabit Spin Torque Magnetoresistive Random Access Memory (ST-MRAM) with lead customers. This breakthrough product delivers a high-endurance, persistent memory with a DDR4- compatible interface. ...

The I 2 C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data A new low-cost, low-risk memory solution offering unlimited endurance and safe data storage at power loss is now available from Microchip ...

Provides the Industry’s First Self-refresh DRAM Device with the 12-Pin HyperBus™ Interface; Serves as Expanded Scratchpad Memory for High-Performance Applications Cypress Semiconductor announced sampling of a new high-speed, ...

New generation Toshiba BiCS FLASH adds layers, boosts capacity Toshiba Corporation unveiled the latest generation of its BiCS FLASH three-dimensional (3D) flash memory with a stacked cell structure, a 64-layer device that will be first in the world ...

Radiation-hardened power-management device integrates comprehensive functionality in an ultra-small form factor Texas Instruments (TI) introduced the industry's first double-data-rate (DDR) memory linear regulator for space applications. The ...