Новости - Дискретные компоненты - 7

AEC-Q101 approved devices with 120 V, 150 V, and 200 V combine best attributes of Schottky and fast recovery diodes Nexperia has announced a range of new silicon germanium (SiGe) rectifiers with 120 V, 150 V, and 200 V reverse voltages that combine ...

Diodes Incorporated announced the availability of the first in a new generation of discrete MOSFETs. The DMN3012LEG delivers increased efficiency in a smaller package to provide significant cost, power, and space savings in a wide variety of power ...

Optimized temperature and switching behavior for high-efficiency applications Alpha and Omega Semiconductor (AOS) announced the release of the new 1200 V silicon carbide (SiC) αSiC MOSFET technology platform. Specifically targeting the ...

TDK Corporation presents a new series of compact EPCOS SMT current sense transformers. They are designed for measuring currents of up to 7 A at frequencies between 50 kHz and 1 MHz. The B82801A1 series comprises nine types that offer transformation ...

Easy-to-use package for wearables and high-volume applications Nexperia has launched a range of MOSFETs in the ultra-small DFN0606 package for mobile and portable applications including wearables. The devices also offer the lowest R DS(on) for ...

Infineon Technologies develops solutions for highest efficiency and quality requirements. The newly launched 600 V CoolMOS™ S7 product family leads the way for power density and energy efficiency for applications where MOSFETs are switched at ...

2 A and 3 A Devices Feature Reverse Voltages From 45 V to 200 V and Forward Voltage Drop Down to 0.36 V Vishay Intertechnology expanded its offering of surface-mount TMBS Trench MOS Barrier Schottky rectifiers with 16 new 2 A and 3 A devices in the ...

TDK's proprietary low-distortion ferrite material enables high audio quality High rated current of 2 A or higher makes smart speakers and external speakers TDK Corporation expanded the MAF series of noise suppression filters with two new ...

For Bidirectional Switching in 24 V Systems, Device Features Best in Class R S‑S(ON) Down to 10 mΩ Typical and Industry-Low R S-S(ON) per Area Vishay Intertechnology introduced a new common-drain dual n-channel 60 V MOSFET in the compact, ...

Proven process, robust and scalable, ready for volume applications Nexperia announced its entry into the gallium nitride (GaN) FET market with the introduction of the 650 volt GAN063-650WSA , a very robust device with a gate-source voltage (V GS ) ...